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S_x96x_S
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TSMC ..
June 8, 2021
An AnandTech Interview with TSMC: Dr. Kevin Zhang and Dr. Maria MarcedIC: As process nodes shrink, resistance on metal layers is becoming more problematic. With regards innovative solutions, and exotic materials versus copper interconnects, is it just a case of more research down that front? Or do we need to put more effort into increasing and routing higher metal layers?
KZ: I think in the research session at our advanced technology introduction, we did cover a little bit about the back end work. For example, we are continuing to optimize the copper grain boundary to bring a lower resistance metal line to our overall chip technology and new technology. Also, with dielectrics we continue to find innovative materials to improve the dielectric in parasitic capacitance. So, those things are being actively researched.
The 3D integration can also bring an alternative solution to this whole performance requirement in the back-end. You can instead route from A to B in a 2 dimensional space, or you can route A to B vertically in 3 dimensions. In some cases, by going vertical, you can reduce the overall length of the RC wire, and reduce pass delay significantly. So all those things have to be looked at going forward.
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