According to the company, the OmniBSI architecture delivers a number of performance improvements over FSI, including increased sensitivity per unit area, improved quantum efficiency and reduced cross talk and photo response non-uniformity. A much higher chief ray angle enables shorter lens heights which in turn allows for thinner camera modules, which are ideal for use in the next generation of ultra-thin mobile phones. Finally, BSI technology affords a much larger aperture size, which allows for lower f stops facilitating the development of better performing camera modules with superior camera performance. 

“Although backside illumination concepts have been studied for over 20 years, up until now nobody has been able to successfully develop the process for commercial, high volume CMOS sensor manufacturing,” said Dr. Ken Chen, Senior Director, Mainstream Technology Marketing, TSMC. “Combining OmniVision’s imaging expertise with TSMC’s experience in process development, we have delivered a truly advanced technology that defines the future of digital imaging.” OmniVision is currently demonstrating an 8 MegaPixel, OmniBSI CameraChip sensor, and expects to start sampling first products before the end of June.